Semiconductor device and method of manufacturing the same
US6943076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2001 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Aug 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/48
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gate insulation films each containing titanium oxide as a primary constituent material are formed on one major surface of a semiconductor substrate. Gate electrode films are formed in contact with the gate insulation films. The gate electrode films contain ruthenium oxide or alternatively iridium oxide as a primary constituent material. In order to prevent electrically conductive elements from diffusing into titanium oxide of the gate insulation films, ruthenium oxide or iridium oxide is effectively used as a primary constituent material of the gate electrodes. A semiconductor device can be realized in which occurrence of a leak current is suppressed by increasing a physical film thickness while sustaining desired dielectric characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.