Method for manufacturing a nonvolatile memory device
US6943082B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Mar 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A method, for manufacturing a nonvolatile memory device, includes: forming a gate layer above which a stopper layer is disposed on a semiconductor layer; forming control gates on both side surfaces of the gate layer with an ONO film interposed therebetween; forming an insulating layer over the entire surface; polishing the insulating layer so that the stopper layer is exposed; removing the stopper layer and thereby exposing the top surface of the gate layer; forming a conductive layer above the gate layer and the insulating layer; etching the conductive layer and the gate layer and thereby forming a word line and a word gate and removing the gate layer remained under the etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.