Light emitting heterostructure
US6943377B2 · kind B2 · utility
42Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Oct 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved light emitting heterostructure. In particular, a nitride-based light emitting heterostructure is provided that includes a light generating structure and a distributed semiconductor heterostructure Bragg reflector structure formed above the light generating structure. In operation, the light generating structure generates light, a portion of which is reflected by the distributed semiconductor heterostructure Bragg reflector structure, thereby increasing the total amount of light that can be emitted from the heterostructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.