Semiconductor optoelectronic device with electrically adjustable transfer function
US6943384B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 3, 2002 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Oct 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18363
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention concerns an optoelectronic device comprising at alteration of at least three semiconductor layers with selected shape, and two air layers. The semiconductor layers having N-type or P-type doping which may differ or not from one layer to the next layer, are separated by spacers whereof the doping is non-intentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities, and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers and the spacers are selected so that the structure has at least an optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.