Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer
US6943431B2 · kind B2 · utility
4Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Jul 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the second insulating film having a dielectric constant lower than that of the first insulating film. A first wiring pattern is formed over the second insulating film. A conductive connection member buried in the second and first insulating films electrically interconnects the first wiring pattern and semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.