Drive control circuit for a junction field-effect transistor

US6943611B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Matthias Braun · Ludwigsburg, DE
• Benno Weis · Hemhofen, DE

Key dates

• Filing date: Mar 20, 2003
• Grant date: Sep 13, 2005
• Expiry date: May 26, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K2017/6875
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A drive control circuit for a junction field-effect transistor having a gate terminal, a drain terminal and a source terminal as well as a gate leakage current and a maximally permissible gate current, includes a current supply which feeds the gate and produces a control current which is greater than the gate leakage current and smaller than the maximally permissible gate current for turning the junction field-effect transistor off.