Integrated charge pump voltage booster
US6943615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Nov 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/073
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The charge pump uses PMOS transistors for implementing the first and the second charge transfer switches of the charge pump. Substantially, the closing and opening of the first switch through which the first capacitor is charged, of the second switch for transferring the electric charge from the first capacitor to the load capacitance connected to the output node of the circuit and of the third switch for discharging to ground the load capacitance, are driven by a logic NOR gate. A first input of the NOR gate is connected to a common control node of the PMOS transistor forming the second switch and of a NMOS transistor forming the third switch, a second inverting input is connected to the output node, and the output is connected to the first capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.