Charge dissipation in electrostatically driven devices
US6944008B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Dec 18, 2002 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Jun 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G5/019
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems (“MEMS”) device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.