Patent · US Expired

Variable-persistence molecular memory devices and methods of operation thereof

US6944047B2 · kind B2 · utility

12Cited by
12References
64Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 19, 2002
Grant dateSep 13, 2005
Priority date
Expiry dateNov 11, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/79
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A molecular memory cell includes first and second electrodes. First and second charge storage molecules have respective first and second oxidation potentials and are disposed between the first and second electrodes. A molecular linkage couples the first and second charge storage molecules to the first electrode and provides respective first and second electron transfer rates for the first and second charge storage molecules. The first and second different oxidation potentials are different and/or the first and second electron transfer rates are different. In particular, the second oxidation potential may be greater than the first oxidation potential and the first electron transfer rate may be greater than the second electron transfer rate, such that the first charge storage molecule may be used as fast, volatile primary memory and the second charge storage molecule can be used as slower, less volatile secondary memory. In various embodiments, memory cells can be constructed from an admixture of charge storage molecules or by using a bipartite charge storage molecule. Memory cells can include a molecular transistor incorporating such molecular structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.