Semiconductor optical component
US6944198B2 · kind B2 · utility
1Cited by
8References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 4, 2002 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Dec 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The laser type semiconductor optical component comprises: a semiconductor material substrate, a bottom cladding layer containing n-type carriers, an active layer forming one of more quantum wells, and a top cladding layer containing p-type carriers. To increase the emission power of the laser without increasing the vertical divergence of the beam, the bottom cladding layer has a higher refractive index than the top cladding layer. The lasers for pumping optical fiber amplifiers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.