Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser

US6944199B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Bruno Acklin · Regensburg, DE
• Martin Rudolf Behringer · Regensburg, DE
• Karl Joachim Ebeling · Ulm, DE
• Christian Hanke · Wien, AT
• Jörg Heerlein · Regensburg, DE
• Lutz Korte · Feldkirchen-Westerham, DE
• Johann Luft · Wolfsegg, DE
• Karl-Heinz Schlereth · Burglengenfeld, DE
• Werner Spath · Holzkirchen, DE
• Zeljko Spika · Suzhou, CN

Key dates

• Filing date: Jun 12, 2003
• Grant date: Sep 13, 2005
• Expiry date: Sep 7, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/2275
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.