Method of making a nanoscale electronic device
US6946336B2 · kind B2 · utility
8Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | May 13, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/932
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.