Gate oxide film structure for a solid state image pick-up device
US6946694B2 · kind B2 · utility
5Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | May 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
Abstract
In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.