Temperature-insensitive bias circuit for high-power amplifiers
US6946911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Sep 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/447
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An exemplary bias circuit is coupled to an amplifier. The bias circuit comprises a first bipolar transistor, a second bipolar transistor and a third bipolar transistor. The first bipolar transistor has a base connected to a first node, and the first node is connected to a reference voltage through a first resistor. The second bipolar transistor has a base connected to the first node. The third bipolar transistor has a collector connected to the first node and a base connected to an emitter of the first bipolar transistor at a second node. An emitter of the second bipolar transistor is connected to a base of a fourth bipolar transistor associated with the amplifier, and the second bipolar transistor does not have a resistor connected to the emitter of the second bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.