Optically pumpable surface-emitting semiconductor laser device

US6947460B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Werner Spath · Holzkirchen, DE
• Johann Luft · Wolfsegg, DE
• Stephan Lutgen · Regensburg, DE
• Norbert Linder · Wenzenbach, DE
• Tony Albrecht · Bad Abbach, DE
• Ulrich Steegmüller · Regensburg, DE

Key dates

• Filing date: Mar 28, 2003
• Grant date: Sep 20, 2005
• Expiry date: Apr 2, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/4056
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.