Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US6949140B2 · kind B2 · utility
27Cited by
3References
69Claims
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Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Oct 1, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.