Low pressure plasma processing apparatus and method
US6949144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2002 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Oct 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01087
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There are provided a low pressure plasma processing apparatus and method by which a throughput can be improved, film contamination can be effectively prevented, and a film can be readily managed. A film substrate is carried in from the outside of a plasma processing apparatus main body to a substrate carrying position in the plasma processing apparatus main body, the film substrate positioned at the substrate carrying position is carried into a chamber, a reaction gas is introduced while the chamber is being evacuated, high frequency power is applied under low pressure to generate plasma so that plasma processing is performed to remove organic matter from the film substrate, and the film substrate subjected to plasma processing is taken out from the chamber and positioned at a substrate carrying-out position in the plasma processing apparatus main body and carried out of the plasma processing apparatus main body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.