MOSFET-fused nonvolatile read-only memory cell (MOFROM)
US6949423B1 · kind B1 · utility
10Cited by
6References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 26, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Nov 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
With directly biasing drain to source in a floating-gate N-MOSFET, a new MOSFET-fused nonvolatile ROM cell (MOFROM) is provided by tunneling-induced punch through of the drain junction to the source. The MOFROM is completely compatible with the mainstream standard CMOS process. The standard MOSFET presents an “OFF” state before the burning and an “ON” state with a stable low-resistance path after the burning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.