Semiconductor power component and a method of producing same

US6949439B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Peter Flohrs · Reutlingen, DE
• Robert Plikat · Eningen unter Achalm, DE
• Wolfgang Feiler · Reutlingen, DE

Key dates

• Filing date: Mar 26, 2002
• Grant date: Sep 27, 2005
• Expiry date: Jul 15, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/441

Abstract

A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 μm.