Nonvolatile semiconductor memory device and method for operating the same
US6949788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2000 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Jul 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device having MONOS type memory cells of increased efficiency by hot electron injection and improved scaling characteristics includes a channel forming region in the vicinity of a surface of a substrate, first and second impurity regions, acting as a source and a drain in operation, formed in the vicinity of the surface of the substrate sandwiching the channel forming region between them, a gate insulating film stacked on the channel forming region and having a plurality of films, and a charge storing means that is formed in the gate insulating film dispersed in the plane facing the channel forming region. A bottom insulating film includes a dielectric film that exhibits a FN type electroconductivity and makes the energy barrier between the bottom insulating film and the substrate lower than that between silicon dioxide and silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.