Combined atomic layer deposition and damascene processing for definition of narrow trenches
US6949833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2002 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Oct 17, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3116
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention offers a structure that includes a substrate with a top surface and a bottom surface, an etched dielectric layer having sidewalls and an upper surface, wherein the etched dielectric layer with a thickness of v, is positioned upon a first portion of the top surface of the substrate but not positioned upon a second portion of the top surface of the substrate having a width equal to x, an atomic layer deposited (ALD) film with a thickness of y, positioned upon the upper surface of the etched dielectric layer, the sidewalls of the etched dielectric layer, and the second portion of the top surface of the substrate, and a trench formed by the atomic layer with a width equal to x−2y. The invention also offers a method of forming a structure with a trench that includes the steps of depositing a dielectric layer on a substrate, forming a patterned photoresist on the dielectric layer, forming a space having a width x, by etching the dielectric layer, removing the patterned photoresist to form a gap having sidewalls and a bottom, and depositing an atomic layer with a thickness of y on the etched dielectric layer, and the sidewalls and the bottom of the gap, wherein a trench is f…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.