Methods and systems for resistivity anisotropy formation analysis
US6950748B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Mar 5, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01V3/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Techniques for determining a formation property by simplifying various two-geological-layer or multi-geological-layer models into a multi-electrical-layer model. A volume fraction of a layer in a multi-electrical-layer model is determined for an anisotropic region (sliding window) of the formation. The multi-electrical-layer electrical model includes a relative-lower-resistivity layer and a relative-higher-resistivity layer. A high-resolution resistivity measurement is used in the determination and resistivities for the relative-lower-resistivity layer and for the relative-higher-resistivity layer based on the volume fraction and bulk resistivity measure ments of the anisotropic region are determined. The formation property is based on the volume fraction, the resistivity of the relative-lower-resistivity layer, the resistivity of the relative-higher-resistivity layer, a total porosity of the anisotropic region, and bulk resistivity measurements of the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.