Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 μm and 300 μm and use of the same

US6951637B2 · kind B2 · utility

Assignee

• SOLARWORLD AG · DE

Inventors

• Hans-Dieter Block · Cologne, DE
• Udo Krauter · Leverkusen, DE
• Peter Schreckenberg · Bremen, DE

Key dates

• Filing date: Nov 6, 2001
• Grant date: Oct 4, 2005
• Expiry date: Nov 6, 2021

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B22F2999/00
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 μm can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.