High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US6951819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2003 |
| Grant date | Oct 4, 2005 |
| Priority date | — |
| Expiry date | Dec 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
In one embodiment, a method of forming a multijunction solar cell having lattice mismatched layers and lattice-matched layers comprises growing a top subcell having a first band gap over a growth semiconductor substrate. A middle subcell having a second band gap is grown over the top subcell, and a lower subcell having a third band gap is grown over the middle subcell. The lower subcell is substantially lattice-mismatched with respect to the growth semiconductor substrate. The first band gap of the top subcell is larger than the second band gap of the middle subcell. The second band gap of the middle subcell is larger than the third band gap of the lower subcell. A support substrate is formed over the lower subcell, and the growth semiconductor substrate is removed. In various embodiments, the multijunction solar cell may further comprise additional lower subcells. A parting layer may also be provided between the growth substrate and the top subcell in certain embodiments. Embodiments of this reverse process permit the top and middle subcells to have high performance by having atomic lattice spacing closely matched to that of the growth substrate. Lower subcells can be included wit…
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