Semiconductor light-emitting device
US6952025B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2001 |
| Grant date | Oct 4, 2005 |
| Priority date | — |
| Expiry date | Jan 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A small-sized semiconductor light-emitting device of high emission directivity and high output is provided. A portion of a light extraction section of a semiconductor light-emitting device including a pn-junction portion is covered with a light-shielding substance of low conductivity. The electrical resistance of the light-shielding substance is 106 Ωm or higher, and the substance contains powder of at least one species selected from metals and pigments. The powder of metal contains at least one species selected from among Al, Cu, Ag, Au, Pt, Ti, Ni, Sn, Pb, Mg, Zn, Fe, Co, and Cr. The powder is a plate-like powder having a thickness falling within a range of 0.001-10 μm and a length falling within a range of 0.01-100 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.