Microelectromechanical device with integrated conductive shield
US6952042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2002 |
| Grant date | Oct 4, 2005 |
| Priority date | — |
| Expiry date | Jun 17, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/0627
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.