High-density plasma process for depositing a layer of silicon nitride
US6953609B2 · kind B2 · utility
510Cited by
2References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 14, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Nov 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-density plasma process is proposed for depositing a layer of Silicon Nitride on a substrate in a plasma reactor. The process includes the steps of: providing a gas including precursor components of the Silicon Nitride, generating a plasma applying a radio-frequency power to the gas, and the plasma reacting with the substrate to deposit the layer of Silicon Nitride. The power applied to the gas is in the range from 2.5 kW to 4 kW.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.