Polysilicon material and semiconductor devices formed therefrom
US6953716B2 · kind B2 · utility
1Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Dec 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal induced lateral crystallization (MILC) poly-silicon material is produced by depositing a metal in a predefined pattern on amorphous silicon, and heat treating the silicon at a first temperature to form a MILC poly-Si material. The MILC poly-Si material is further heat treated at a second temperature higher than the first temperature to induce recrystallization. The second high temperature recrystallization step significantly enhances the material structure, and in particular the grain structure, of the poly-Si material with substantial benefits to the performance of semiconductor devices made therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.