Aluminum nitride sintered body and substrate for electronic devices
US6953761B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 30, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Sep 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/0306
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An aluminum nitride sintered body produced by sintering under pressure of a powder composition comprising aluminum nitride and 5 to 30% by weight of at least one sintering aid selected from the group consisting of Nd, Sm, Eu, Er, Dy, Gd, Pr and Yb, per 100% by weight of the powders of aluminum nitride and the sintering aid, wherein the amount of the sintering aid is a conversion value as oxides of the elements, the sintering body that has been subjected to mirror-polishing having a surface roughness R max of 0.2 μm or less and a thermal conductivity of 200 (W/mK) or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.