Electronic gain cell based charge sensor
US6953958B2 · kind B2 · utility
211Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Apr 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A gated metal oxide semiconductor field effect transistor (MOSFET) gain cell is formed with a flow channel for molecule flow. The flow channel is formed under the gate, and between a source and drain of the transistor. The molecule flow modulates a gain of the transistor. Current flowing between the source and drain is representative of charges on the molecules flowing through the flow channel. A plurality of individually addressable gain cells are coupled between chambers containing samples to measure charges on molecules in the samples passing through the gain cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.