Hydrogenated oxidized silicon carbon material
US6953984B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2004 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Apr 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.