Silicon oxide film formation method
US6955836B2 · kind B2 · utility
561Cited by
1References
4Claims
0Family size
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Key dates
| Filing date | Dec 23, 2002 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Mar 9, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45591
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO2 film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N2 gas, NO gas, N2O gas, NO2 gas or the like) is added to oxygen atom containing gas (O2 gas, O3 gas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.