Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
US6955858B2 · kind B2 · utility
1Cited by
7References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2002 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Transition metal doped II–V nitride material films exhibit ferromagnetic properties at or above room temperature. A III–V nitride material film may be doped with a transition metal film in-situ during metal-organic chemical vapor deposition and/or by solid-state diffusion processes. Doping of the III–V nitride material films may proceed in the absence of hydrogen and/or in the presence of nitrogen. In some embodiments, transition metal-doped III–V nitride material films comprise carbon concentrations of at least 1017 atoms per cubic centimeter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.