Semiconductor light emitting element with improved light extraction efficiency
US6956241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2003 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Apr 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
Abstract
A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1 λ to 3 λ on the side surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.