Semiconductor device and method of manufacturing the same
US6956259B2 · kind B2 · utility
3Cited by
7References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 11, 2003 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Jun 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
Abstract
Disclosed is a semiconductor device comprises a semiconductor substrate having on its surface a trench, a polycrystalline semiconductor film formed inside the trench, a diffusion layer deposited on a surface region of the semiconductor substrate, and a metal semiconductor nitride layer interposed between the diffusion layer and the polycrystalline semiconductor film, the metal semiconductor nitride layer including a metal, nitrogen and a semiconductor constituting the semiconductor substrate, and electrically connecting the polycrystalline semiconductor film with the diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.