Patent · US Expired

Stacked semiconductor laser diode

US6956881B2 · kind B2 · utility

4Cited by
5References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 20, 2001
Grant dateOct 18, 2005
Priority date
Expiry dateNov 20, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/4087
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.