Stacked semiconductor laser diode
US6956881B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Nov 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate (1). A first diode laser (12) is arranged on the substrate (1), and a second diode laser (13) is arranged on the first diode laser (12). Between the first diode laser (12) and the second diode laser (13) there is a contact layer (6). The contact layer (6) comprises a first conductive layer (18) of a first conduction type and a second conductive layer (20) of a second conduction type and an interlayer (19) which is arranged between the first and second conductive layers (18, 20).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.