Film forming method and film forming device
US6958175B2 · kind B2 · utility
234Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2002 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | Mar 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02112
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is reacted with a diborane gas 13 diluted with a hydrogen gas, thereby forming a boron nitride film 15 on a substrate 4. Thus, the boron nitride film 15 excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant κ can be formed speedily.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.