Imager with improved sensitivity

US6958194B1 · kind B1 · utility

Assignee

• Foveon, Inc. · US

Inventors

• Peter J. Hopper · San Jose, US
• Philipp Lindorfer · San Jose, US
• Michael Mian · Livermore, US
• Robert Drury · Santa Clara, US

Key dates

• Filing date: Oct 21, 2003
• Grant date: Oct 25, 2005
• Expiry date: Oct 21, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/12674

Abstract

An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.