Method to produce germanium layers
US6958254B2 · kind B2 · utility
83Cited by
5References
38Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 30, 2002 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | Apr 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a very large area germanium layer on a silicon substrate, comprises forming an initial layer of germanium on the silicon substrate such that rounded S—K protuberances are produced by lattice mismatch. Oxidation produces silicon dioxide between the protuberances, and a subsequent reduction step exposes the tops of the protuberances. Since the top regions are almost perfectly relaxed and free of stress, these form nucleation sites for the subsequent growth of a final layer of germanium, formed as single crystals each extending from a nucleation site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.