Patent · US Expired

SOI semiconductor configuration and method of fabricating the same

US6958282B1 · kind B1 · utility

8Cited by

9References

10Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Thomas Huttner · Marktoberdorf, DE
Helmut Wurzer · Dresden, DE
Reinhard Mahnkopf · Oberhaching, DE

Key dates

Filing date	May 17, 1999
Grant date	Oct 25, 2005
Priority date	—
Expiry date	Sep 21, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6758
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor configuration has a base layer made of semiconductor material and formed, in particular, by a substrate. An insulation layer is arranged above the base layer, and a layer made of monocrystalline silicon adjoins the insulation layer. A passivating substance is present, with the formation of Si—X bonds, in the region of the interface between the insulation layer and the monocrystalline silicon layer. The bond energy of the Si—X bond is greater than the bond energy of an Si—H bond.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.