Semiconductor device having low resistivity source and drain electrodes
US6958500B2 · kind B2 · utility
13Cited by
6References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 14, 2003 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | Feb 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dummy gate crossing an active area having ends in contact with an isolation area is formed. A low area lower than a dummy gate is formed in the isolation area. Side walls are formed in the active area except the dummy gate. A semiconductor film having the same height as that of the dummy gate is formed in the low area. An oxide film is formed on the semiconductor film. The dummy gate is removed by the oxide film as a mask. The oxide film is removed by the semiconductor film as a stopper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.