Data writing method for semiconductor memory device and semiconductor memory device
US6958938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2004 |
| Grant date | Oct 25, 2005 |
| Priority date | — |
| Expiry date | Dec 9, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data writing method for a semiconductor memory device includes writing data into the first memory cell, rewriting the data into the first memory cell when an insufficiency of the data of the first memory cell is determined as a result of verifying the data of the first memory cell at one first reference threshold voltage, writing data into the second memory cell following writing the data into the first memory cell, and rewriting the data into the first memory cell following writing the data into the second memory cell when an insufficiency of the data of the first memory cell is determined as a result of verifying the data of the first memory cell at one second reference threshold voltage. The first reference threshold voltage is set to be different from the second reference threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.