Stacked ferroelectric memory device and method of making same
US6960479B2 · kind B2 · utility
8Cited by
36References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2001 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | May 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures. Combining ferroelectric polymer and ferroelectric oxide layers on the pre-fabricated silicon substrate cavity forms a multi-rank structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.