Image sensor with a photodiode array
US6960799B2 · kind B2 · utility
9Cited by
48References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 27, 1999 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | Aug 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
An array of photodiodes includes regions of a second conductivity type formed in a semiconductive region of a first conductivity type, divided into three interleaved sub-arrays. All the photodiodes of a same sub-array are coated with a same interference filter including at least one insulating layer of determined thickness coated with at least one conductive layer. According to the present invention, the conductive layers are electrically connected to the semiconductive region of a first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.