Patent · US Expired

Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor

US6960878B2 · kind B2 · utility

87Cited by
2References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 24, 2002
Grant dateNov 1, 2005
Priority date
Expiry dateJan 13, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8513
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.