Semiconductor laser

US6961358B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Götz Erbert · Löbau, DE
• Gunther Trankle · Berlin, DE
• Hans Wenzel · Santa Ana, US

Key dates

• Filing date: Sep 20, 2001
• Grant date: Nov 1, 2005
• Expiry date: Feb 28, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/18
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser has an antiresonant waveguide (10), which is formed by a layer sequence applied to a substrate (1). The layer sequence has outer waveguide regions (2, 8), reflection layers (3, 7), and a waveguide core (11) with an active layer (5). With this structure, semiconductor lasers with only slight vertical beam divergence and with a large beam cross section can be produced.