Method of fabricating a semiconductor device having a nanoparticle porous oxide film
US6962882B2 · kind B2 · utility
2Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2002 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | Jul 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen atmosphere to oxidize Si, forming a nanoparticle oxide thin film consisting of SiO2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.