Monitoring low temperature rapid thermal anneal process using implanted wafers
US6962884B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2003 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | Feb 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing integrated circuit devices. The method includes providing a monitor wafer, which comprising a silicon material. The method introduces a plurality of particles within a depth of the silicon material. The plurality of particles have a reduced activation energy within the silicon material. The method subjects the monitor wafer including the plurality of particles into a rapid thermal anneal process. The method includes applying the rapid thermal anneal process at a first state including a first temperature. The first temperature is within a range defined as a low temperature range, which is less than 650 Degrees Celsius. The method includes removing the monitor wafer and measuring a sheet resistivity of the monitor wafer. The method also determines the first temperature within a tolerance of less than 2 percent across the monitor wafer. The method operates the rapid thermal process using a plurality of production wafers if the first temperature is within a tolerance of a specification temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.