Patent · US Expired

Hybrid active and electronic circuit with evanescent coupling

US6963118B2 · kind B2 · utility

23Cited by
3References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 16, 2003
Grant dateNov 8, 2005
Priority date—
Expiry dateDec 16, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2201/20
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.