Semiconductor device including a layer having a β-crystal structure
US6963139B2 · kind B2 · utility
28Cited by
11References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2004 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | Jul 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the β-crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.